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| BD181 - BD182 - BD183 NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS BD181, BD182 and BD183 are silicon NPN transistors intended for a wide variety of high power applications. Typical applications include power switching circuits, audio amplifiers, solenoid drivers, and series and shunt regulators. ABSOLUTE MAXIMUM RATINGS Symbol VCBO Collector-Base Voltage Ratings BD181 BD182 BD183 BD181 BD182 BD183 BD181 BD182 BD183 BD181 BD182 BD183 BD181 BD182 BD183 BD181 BD182 BD183 BD181 BD182 BD183 BD181 BD182 BD183 Value 55 70 85 45 60 80 55 70 85 55 70 85 7.0 15 Unit V VCEO Collector-EmitterVoltage V VCER Collector-EmitterVoltage RBE=100 V VCEX Collector-EmitterVoltage VBE=-1.5 V V VEBO IC IB PT Emitter-Base Voltage V A A Watts Collector Current Base Current 7.0 Power Dissipation @ TC < 25 150 COMSET SEMICONDUCTORS 1/3 BD181 - BD182 - BD183 Symbol PTOT Power dissipation Junction Storage Temperature Ratings BD181 BD182 BD183 BD181 BD182 BD183 Value 117 Unit W TJ Ts 200 -65 to +200 C THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case Value 1.5 Unit C/W ELECTRICAL CHARACTERISTICS TC=25C unless otherwise noted Symbol Ratings Test Condition(s) BD181 BD182 BD183 BD181 BD182 BD183 BD181 BD182 BD183 BD181 BD182 BD183 BD181 BD182 BD183 Min Typ Mx Unit 45 60 80 55 70 85 - IEBO Emitter-Base Cutoff Current VEB= 7 V, IC=0 VCB=45 V tj=200C VCB=60 V tj=200C VCB=80 V tj=200C IC=200 mA, IB=0 IC=3 A, IB=0.3 A IC=4 A, IB=0.4 A IC=3 A, IB=0.3 A IC=200 mA, RBE=100 5.0 2.0 5.0 5.0 1.0 1.0 1.0 - A ICBO Collector-Base Cutoff Current mA VCEO(BR) VCE(SAT) VBR(CER) Collector-Emitter Breakdown Voltage (*) Collector-Emitter saturation Voltage (*) Collector-Emitter Breakdown Voltage (*) V V V COMSET SEMICONDUCTORS 2/3 BD181 - BD182 - BD183 Symbol Ratings Collector-Emitter Breakdown Voltage (*) Test Condition(s) BD181 BD182 BD183 BD181 BD182 BD183 Min Typ Mx Unit fhfe VCE=4.0 V, IC=3.0 A VCE=4.0 V, IC=3.0 A VCE=4.0 V, IC=4.0 A VCE=4.0 V, IC=3.0 A 15 20 20 20 - 70 70 70 kHz hFE Static forward current transfer ratio (*) - For PNP types current and voltage values are negative (*) Pulse Width 300 s, Duty Cycle 2.0% MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Emitter Collector COMSET SEMICONDUCTORS 3/3 |
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